1 item symbol rating unit drain-source voltage v ds 100 continuous drain current i d 50 pulsed drain current i d(puls] 200 gate-source voltage v gs 30 maximum avalanche energy e av *1 464 max. power dissipation ta=25 c p d 1.67 tc=25 c p d 135 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2sK3216-01 fuji power mos-fet n-channel silicon power mos-fet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators ups (uninterruptible power supply) dc-dc converters equivalent circuit schematic maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) gate(g) source(s) drain(d) item symbol test conditions zero gate voltage drain current i dss v ds =100v v gs =30v i d =25a v gs =10v i d =25a v ds =25v v cc =48v i d =50a v gs =10v r gs =10 w min. typ. max. units v v a ma na m w s pf a v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient 0.93 75.0 c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f i av v sd t rr q rr item drain-source breakdown voltaget gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off avalanche capability diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d =1ma v gs =0v i d =1ma v ds =v gs tch=25c v gs =0v tch=125c v ds =0v v ds =25v v gs =0v f=1mhz l=100h t ch =25c i f =50a v gs =0v t ch =25c i f =50a v gs =0v -di/dt=100a/s t ch =25c v a a v mj w w c c *1 l=298h, vcc=24v 100 2.5 3.0 3.5 1 100 0.1 0.5 10 100 20 25 16.0 32.0 3200 4800 760 1140 230 345 23 35 130 195 110 165 65 100 50 0.97 1.46 150 0.80 -55 to +150 to-220ab 3. source free datasheet http://
2 characteristics 2sK3216-01 fuji power mosfet 0 25 50 75 100 125 150 0 25 50 75 100 125 150 power dissipation pd=f(tc) pd [w] tc [c] 10 -1 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 3 id [a] vds [v] safe operating area id=f(vds):single pulse(d=0),tc=25c t= 1s 10s 1ms 10ms 100ms 100s d.c. 012345 0 25 50 75 100 125 15v 6.0v 5.5v 6.5v 4.5v 10v 7.0v 5.0v vgs=20v typical output characteristics id=f(vds):80s pulse test,tc=25c id [a] vds [v] 0246810 0.1 1 10 100 typical transfer characteristics id=f(vgs):80s pulse test,vds=25v,tch=25c id [a] vgs [v] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 typical forward transconductance g fs=f(id):80s pulse test,vds=25v,tch=25c gfs [s] id [a] 0 20 40 60 80 100 120 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 7.0v rds(on) [ w ] id [a] typical drain-source on-state resistance rds(on)=f(id):80s pulse test,tch=25c 10v 15v 20v 5.5v 6.0v 5.0v vgs= 4.5v 6.5v t t d= t t free datasheet http://
3 2sK3216-01 fuji power mosfet -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 max. typ. drain-source on-state resistance rds(on)=f(tch):id=25a,vgs=10v rds(on)[m w ] tch [c] -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 vgs(th) [v] tch [c] gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=1ma min. typ. max. 10 -2 10 -1 10 0 10 1 10 2 100p 1n 10n 100n typical capacitances c=f(vds):vgs=0v,f=1mhz c [f] vds [v] ciss coss crss 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 20v 50v vcc=80v typical gate char g e characteristics vgs=f(q g ):id=50a,tch=25c 0 10 20 30 40 50 60 70 80 90 100 vds [v] vgs [v] qg [nc] vgs vds 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 10 20 30 40 50 60 70 80 90 100 typical forward characteristics of reverse diode -id=f(vsd):80s pulse test,tch=25c 10v 5v vgs=0v -id [a] vsd [v] 10 -1 10 0 10 1 10 2 10 1 10 2 10 3 10 4 t [ns] id [a] td(off) tf tr td(on) typical switchin g characteristics vs. id t=f(id):vcc=48v,vgs=10v,rg=10 w free datasheet http://
4 2sK3216-01 fuji power mosfet 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 maximum avalanche current vs. starting tch i(av)=f(starting tch),non repetitive i(av) [a] startin g tch [c] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 maximum avalanche ener g y vs. startin g tch eas=f(startin g tch):vcc=24v,i av <=50a,non-repetitive eas [mj] starting tch [c] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 transient thermal impedance zth(ch-c)=f(t):d=t/t 0 0.01 0.02 0.05 0.1 0.2 d=0.5 zth(ch-c) [c/w] t [sec] t t d= t t free datasheet http://
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